Phase stability and the arsenic vacancy defect in InxGa1−xAs
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چکیده
منابع مشابه
Phase stability and the arsenic vacancy defect in In x Ga 1 − x As
The introduction of defects, such as vacancies, into InxGa1−xAs can have a dramatic impact on the physical and electronic properties of the material. Here we employ ab initio simulations of quasirandom supercells to investigate the structure of InxGa1−xAs and then examine the energy and volume changes associated with the introduction of an arsenic vacancy defect. We predict that both defect ene...
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Rights: © 2010 American Physical Society (APS). This is the accepted version of the following article: Dong, Yufeng & Tuomisto, Filip & Svensson, B. G. & Kuznetsov, A. Yu. & Brillson, Leonard J. 2010. Vacancy defect and defect cluster energetics in ion-implanted ZnO. Physical Review B. Volume 81, Issue 8. 081201/1-4. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.81.081201, which has been publ...
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15 صفحه اولVacancy defect distributions in bulk ZnO crystals
We have used positron annihilation spectroscopy to study vacancy defects in ZnO single crystals grown by various methods from both commercial and academic sources. The combination of positron lifetime and Doppler broadening techniques with theoretical calculations provides the means to deduce both the identities and the concentrations of the vacancies. The annihilation characteristics of the Zn...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2011
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.84.184108